发明名称 Isolating trench and manufacturing process
摘要 An isolation trench formed in a semiconductor substrate has side walls and a bottom wall. Spacers are on the side walls and face each other for forming a narrow channel therebetween. The bottom wall and the spacers are coated with an electrically insulating material for delimiting a closed empty cavity in the channel. The isolation trench is applicable to the manufacture of integrated circuits.
申请公布号 US6828646(B2) 申请公布日期 2004.12.07
申请号 US20020272444 申请日期 2002.10.16
申请人 STMICROELECTRONICS SA 发明人 MARTY MICHEL;LEVERD FRANCOIS;CORONEL PHILIPPE;TORRES JOAQUIN
分类号 H01L21/762;H01L21/764;(IPC1-7):H01L29/00 主分类号 H01L21/762
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