| 摘要 |
PURPOSE: A semiconductor memory device provided with a sense amplifying driver with multiple output lines is provided to increase the sensing speed of the bit line sensing amplifier by improving the driving ability of the sense amplifying driver. CONSTITUTION: A semiconductor memory device provided with a sense amplifying driver with multiple output lines includes a sense amplifying array unit, a first driver(100A), a second driver(100B), a first power line and a second power line. The first driver is arranged at one side of the sense amplifying array unit to generate the driving voltage of each sense amplifier. The second driver is arranged at the other side of the sense amplifier array unit to generate the driving voltage of each sense amplifier. The first power line is connected between the output node of the first driver and the output node of the second output node and is connected to the input terminal of the each driving voltage of the plurality of sense amplifiers in parallel. The second power line is connected between the first power line in parallel and is strapped at least one portion thereof with the first power line.
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