| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent the short and the degradation of step coverage in a metal line by forming the metal line through a via hole of a semiconductor chip and to minimize the damage of a conductive terminal due to mounting-stress by forming the conductive terminal on a convex portion of the chip. CONSTITUTION: A pad electrode(53) is formed on a first main surface of a semiconductor chip(51A). A convex portion(58) is formed on a second main surface of the chip. A support substrate(56) is attached to the first main surface of the chip. A metal line layer(64) is formed from the second main surface of the chip through a via hole(VH) to the pad electrode. At this time, the convex portion of the chip is coated with the metal line layer. A conductive terminal(66) is formed on the convex portion. |
