| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve a process margin by forming a shallow trench isolation(STI) layer and by depositing a dual buffer layer composed of a contact etch stop layer and an etch barrier layer. CONSTITUTION: A pad oxide layer and a pad nitride layer are formed on a semiconductor substrate(1). A shallow trench is formed on the resultant structure by using an isolation layer mask. After a wall self-align contact process and a wall oxidation process are performed on the resultant structure, an oxide layer(5) is filled in the shallow trench. A chemical mechanical polishing(CMP) process is performed on the resultant structure. A gate oxide layer(6) and a gate are formed. The dual buffer layer composed of an etch barrier layer and an etch stop layer is formed. After an interlayer dielectric(13) is formed on the resultant structure, the interlayer dielectric is etched by using a contact mask. The dual buffer layer is etched.
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