发明名称 |
BASIC COMPOUND HAVING BENZIMIDAZOLE STRUCTURE AND POLAR FUNCTIONAL GROUP, RESIST MATERIAL CONTAINING THE BASIC COMPOUND USEFUL FOR MICROMACHINING AND PATTERN FORMATION METHOD USING THE MATERIAL |
摘要 |
PURPOSE: Provided are a basic compound, a resist material containing the basic compound which is excellent in resolution and focus margin and is useful for the micromachining using an electron ray or a deep UV ray, and a formation method of a pattern using the material. CONSTITUTION: The basic compound is represented by the formula 1, wherein R1 is H, a C1-C10 linear, branched or cyclic alkyl group, a C6-C10 aryl group or a C7-C10 aralkyl group; and R2 is a C1-C20 linear, branched or cyclic alkyl group having a polar functional group and the polar functional group comprises at least one of an ester group, an acetal group and a cyano group and may comprise at least one of a hydroxyl group, a carbonyl group, an ether group, a sulfide group and a carbonate group. The resist material contains at least one kind of the basic compound having a benzimidazole structure and a polar functional group represented by the formula 1.
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申请公布号 |
KR20040101019(A) |
申请公布日期 |
2004.12.02 |
申请号 |
KR20040035956 |
申请日期 |
2004.05.20 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
HASEGAWA, KOJI;KINSHO, TAKESHI;WATANABE, TAKERU |
分类号 |
C07D235/06;C07D235/12;C07D235/16;C07D235/18;C07D405/06;C09K3/00;G03F7/004;G03F7/038;G03F7/039;H01L21/027;(IPC1-7):G03F7/039 |
主分类号 |
C07D235/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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