| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a pattern drawing method for contact X-ray lithography wherein drawing is carried out by moving the zeroth-order diffraction image of an opening formed in a mask relatively with respect to a substrate applied with a photosensitive agent, and which enables high-contrast continuous drawing. <P>SOLUTION: Using the mask (50) which is such that annular openings (54) are formed in an X-ray absorbing layer (52) formed on a mask substrate (8) which is virtually transparent with respect to X-rays, the light intensity is enhanced at positions on the substrate (6) along which the central line of each opening (54) passes by the diffraction effect of the openings (54) and the phase shift effect of the X-ray absorbing layer (52). <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
