| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device which can reduce the smear and obtain a proper image quality. SOLUTION: The solid-state imaging device includes a semiconductor substrate 22 in which a plurality of pixel regions 23 and transfer regions 24 are disposed adjacent to each other, an insulating film 25 formed on the upper surface of this semiconductor substrate 22, a vertical transfer path 26 provided at the upper part of the semiconductor substrate 22 of the transfer region 24, a laminated transfer electrode 28 having the insulating film 25 as a gate insulating film 27 on the semiconductor substrate 22 of the transfer region 24, an etching protective film 33 coating the semiconductor substrate 22 in which this laminated transfer electrode 28 and the insulating film 25 are formed, a first shielding film 34 having a first photodetecting opening 35 corresponding to the pixel region 23 on this etching protective film 33, an interlayer insulating film 37 for embedding and coating the first photodetecting opening 35 in this first shielding film 34, and a second shielding film 38 having a second photodetecting opening 39 corresponding to the pixel region 23 on this interlayer insulating film 37. COPYRIGHT: (C)2005,JPO&NCIPI
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