| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus with a novel structure for producing a silicon carbide single crystal, whereby a high-quality silicon carbide can be produced. SOLUTION: A reactor 8 surrounded with heat insulation materials 7, 11, and 16 is set in the inside of a vacuum container 1. A silicon carbide single crystal substrate 9 as a seed crystal is set in the inside of the reactor 8. When raw material gas containing an Si-containing gas and a C-containing gas is fed into the reactor 8, a silicon carbide single crystal 21 is grown from the silicon carbide single crystal substrate 9 as the seed crystal. An absorbent 19 that absorbs the unreacted gas discharged from the reactor 8 upon changing the state into a solid is disposed between the unreacted gas exit 8a of the container 8 and the heat insulation material 7. COPYRIGHT: (C)2005,JPO&NCIPI
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