发明名称 Forming a semiconductor device feature using acquired parameters
摘要 In one embodiment of the present invention, a method includes acquiring parameters for a desired feature of a semiconductor device; determining a data array using the parameters; and forming the desired feature using the data array. The desired feature in one embodiment may be a backside trench.
申请公布号 US2004241891(A1) 申请公布日期 2004.12.02
申请号 US20040848894 申请日期 2004.05.19
申请人 SCOTT DANE L.;VASQUEZ KEVIN J. 发明人 SCOTT DANE L.;VASQUEZ KEVIN J.
分类号 H01L21/00;(IPC1-7):H01L21/66 主分类号 H01L21/00
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