METHOD OF MANUFACTURING RECESS TRANSISTOR WITH UNIFORM CHANNEL LENGTH IN INTEGRATED CIRCUIT DEVICE AND RECESS TRANSISTOR MANUFACTURED THEREBY

摘要

PURPOSE: A method of manufacturing a recess transistor in an IC(Integrated Circuit) device and the recess transistor manufactured thereby are provided to obtain uniform channel length regardless of the position of an active region by levelling substantially a bottom of a gate trench using isotropic dry-etching. CONSTITUTION: An isolation region(140a) for defining an active region is formed in a substrate(100). A gate trench(190) is formed at the active region. A substrate portion(200a) between the gate trench and the isolation region is exposed by using wet-etching. A bottom of the gate trench is planarized by removing the exposed substrate portion using isotropic dry-etching. A recess gate is filled in the gate trench.