| 摘要 |
PROBLEM TO BE SOLVED: To decrease the number of manufacturing processes of a thin-film transistor panel. SOLUTION: A scanning line 5 and an electrostatic protective ring 12 are connected through an electrostatic protective element 13 having electrodes 41 and 42 and connection wiring 43. An interlayer insulation film 29 is formed atop a gate insulation film 22 including the electrostatic protective element 13 and thereafter contact holes 44, 45 and 46 are formed by a photolithography method. Next, connection wiring 43 is formed through the contact holes 44 and 45 especially atop the interlayer insulation film 29 by connecting the same to the scanning line 5 and one electrode 41. In such a case, the contact hole 44 is formed continuously with the interlayer insulation film 29 and the gate insulation film 22, by which the contact hole forming processes can be reduced by one process. COPYRIGHT: (C)2005,JPO&NCIPI |
