发明名称 METHOD OF FORMING THIN FILM WITH UNIFORM THICKNESS USING TWO-STEP FILM FORMING PROCESSES AND APPARATUS FOR THE SAME
摘要 PURPOSE: A method of forming a thin film and an apparatus for the same are provided to improve the uniformity of thickness in the thin film by performing alternately a first thin film forming process and a second thin film forming process on a substrate. CONSTITUTION: A substrate is loaded in a chamber(100). A first thin film is formed on the substrate by introducing a first process gas to a first direction(105) in the chamber. A second thin film is formed on the first thin film by introducing a second process gas to a second direction(106) in the chamber. At this time, the second direction is opposite to the first direction. The first and second direction are horizontal direction to the substrate.
申请公布号 KR20040099891(A) 申请公布日期 2004.12.02
申请号 KR20030032023 申请日期 2003.05.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, HAN ME;KIM, GYEONG SEOK;KIM, JAE UNG;LEE, BYEONG GEUN;LIM, EUN TAEK;PARK, IN SEONG;PARK, YEONG UK
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
代理机构 代理人
主权项
地址