发明名称 Mounting structure of high-frequency semiconductor apparatus and its production method
摘要 In a high-frequency circuit having a substrate having a high-frequency transmission line and an dielectric resonator formed on said substrate so that said dielectric resonator and said high-frequency transmission line may be coupled electro-magnetically to each other, a hole part or a cavity part is formed at a part of said substrate and a dielectric resonator is embedded in said hole part or said cavity part. In the same object, a high-frequency circuit having a dielectric resonator is produced by the step for forming a high-frequency transmission line on a substrate, the step for forming a hole part or a cavity part on a part of the substrate, and the step for mounting a dielectric resonator in the hole par formed on the surface of the substrate.
申请公布号 US2004239453(A1) 申请公布日期 2004.12.02
申请号 US20040871054 申请日期 2004.06.21
申请人 HITACHI, LTD. 发明人 SASADA YOSHIYUKI
分类号 C04B35/00;H01P1/20;H01P7/10;H01P11/00;H03B5/18;H04B1/40;(IPC1-7):H01P7/10;H03B7/12;G01S7/28 主分类号 C04B35/00
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