| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solar battery having a high conversion efficiency, and to provide a method of manufacturing CIGS by which the solar battery can be made possible. <P>SOLUTION: A method of forming a Cu(In<SB>1-x</SB>Ga<SB>x</SB>)Se<SB>2</SB>film includes a step of causing an In-Ga-Se film to deposit on a substrate, a step of transforming the In-Ga-Se film into a Cu(In<SB>1-x</SB>Ga<SB>x</SB>)Se<SB>2</SB>film of excessively containing Cu by supplying Cu-Se to the In-Ga-Se film under a heating condition, and a step of forming a Cu(In<SB>1-x</SB>Ga<SB>x</SB>)Se<SB>2</SB>(0<x≤1) film on the substrate by transforming the excessive Cu into Cu(In<SB>1-x</SB>Ga<SB>x</SB>)Se<SB>2</SB>by supplying In-Ga-Se to the Cu(In<SB>1-x</SB>Ga<SB>x</SB>)Se<SB>2</SB>film. The method also includes a step of removing a Cu-Se-based compound left on the surface of the formed Su(In<SB>1-x</SB>Ga<SB>x</SB>)Se<SB>2</SB>film. The solar battery contains the Cu(In<SB>1-x</SB>Ga<SB>x</SB>)Se<SB>2</SB>(0.4≤x≤1) film containing no Cu<SB>2-y</SB>Se in its surface as a photoelectric layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
