发明名称 |
Reduced floating body effect static random access memory cells and methods for fabricating the same |
摘要 |
An SRAM cell that may reduce or eliminate floating body effect when using a SOI and a method for fabricating the same are provided. A floating body of an access transistor of the SRAM is connected to a source region of a driver transistor, for example, through a body extension region extending from an active region. A silicide layer may be formed or a ground line contact may be over-etched to form a conductive contact plug that may provide a current path between the body exterior regions and the source region of the driver transistor.
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申请公布号 |
US2004238892(A1) |
申请公布日期 |
2004.12.02 |
申请号 |
US20030388353 |
申请日期 |
2003.03.13 |
申请人 |
JUNG MU-KYOUNG;KIM YOUNG-WUG;KANG HEE-SUNG |
发明人 |
JUNG MU-KYOUNG;KIM YOUNG-WUG;KANG HEE-SUNG |
分类号 |
H01L21/8244;H01L21/84;H01L27/11;H01L27/12;H01L29/786;(IPC1-7):H01L21/823;H01L21/00;H01L31/039;H01L27/01 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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