发明名称 CHEMICALLY AMPLIFIED POSITIVE PHOTO RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
摘要 <p>A chemically amplified positive photo resist composition, characterized in that it comprises (A) an alkali-soluble resin containing a hydroxystyrene based constituting unit (a1) and a styrene based constituting unit (a2), (B) crosslinking agent, (C) an acid generator and an organic solvent; and a method for forming a resist pattern which comprises using the resist composition. The photo resist composition can form a resist exhibiting high sensitivity, high heat resistance and high resolution (high contrast) and being reduced in undulation phenomenon.</p>
申请公布号 WO2004104703(A1) 申请公布日期 2004.12.02
申请号 WO2004JP07206 申请日期 2004.05.20
申请人 TOKYO OHKA KOGYO CO., LTD.;NAKAGAWA, YUSUKE;HIDESAKA, SHINICHI;MARUYAMA, KENJI;SHIMATANI, SATOSHI;MASUJIMA, MASAHIRO;NITTA, KAZUYUKI 发明人 NAKAGAWA, YUSUKE;HIDESAKA, SHINICHI;MARUYAMA, KENJI;SHIMATANI, SATOSHI;MASUJIMA, MASAHIRO;NITTA, KAZUYUKI
分类号 G03F7/039;G03F7/16;(IPC1-7):G03F7/039 主分类号 G03F7/039
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