| 摘要 |
PURPOSE: A method for crystallizing a silicon is provide to reduce cost for a process by simultaneously achieving crystallization and curing, and improve the reliability of thin film transistors by increasing the mobility of a semiconductor layer. CONSTITUTION: A mask(100) is divided into a crystallizing part and a curing part. The crystallizing part and the curing part are divided into first and second areas respectively. The first area has a plurality of first transmissive parts and a plurality of first interrupting parts. The second area has a plurality of second transmissive parts and a plurality of second interrupting parts. A substrate having an amorphous silicon layer is placed on a stage, corresponding to the mask. The stage is moved in X-axial direction or Y-axial direction to change an irradiated part of the amorphous silicon layer.
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