| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device suppressing the generation of spikes and high in reliability, and its manufacturing method. <P>SOLUTION: The manufacturing method of a semiconductor device is provided with a process for forming a gate 4 on a silicon substrate 1, a process for forming diffusion layers 2, 3 on predetermined positions of the silicon substrate 1, a process for forming the side wall 5 of the gate, a process for forming a silicide metal layer 6 on the diffusion layers 2, 3 and the gate 4, a process for forming an interlayer insulating film 7 on the whole surface of the same, a process for forming contact holes connected to the gate 4 and the silicon substrate 1, a process for forming a barrier metal layer 8a on the contact holes, a process for forming a metallic layer 8b on the barrier metal layer 8a, and a process for pouring Ge ion into the whole surface is provided before the process for forming the side wall 5 of the gate. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
