发明名称 |
Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy |
摘要 |
A method and apparatus for forming a nitrided gate dielectric layer. The method includes generating a nitrogen-containing plasma in a processing chamber via a smooth-varying modulated RF power source to reduce electron temperature spike. Field effect transistor channel mobility and gate leakage current results are improved when the power source is smooth-varying modulated, as compared to square-wave modulated.
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申请公布号 |
US2004242021(A1) |
申请公布日期 |
2004.12.02 |
申请号 |
US20040819392 |
申请日期 |
2004.04.06 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KRAUS PHILIP A.;CHUA THAI CHENG |
分类号 |
H01L21/28;H01L21/314;H01L29/51;(IPC1-7):H01L21/469 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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