| 摘要 |
A method of forming films in a semiconductor device that can appropriately control a resistance value of a thin film resistance on an ozone TEOS film while preventing a metal thin film from remaining around a surface step unit after the metal thin film was dry etched. First, as shown in FIG. 1A, a step unit with the height of about 1 mum is formed by forming elements such as HBT on a semiconductor substrate made up of semi-insulating GaAs. Next, as shown in FIG. 1B, a first ozone TEOS film with the thickness of 900 nm by a Normal pressure CVD method using mixed gas of tetraethoxysilane with ozone. Then, a second ozone TEOS film with the thickness of 100 nm is formed by reducing the ozone concentration to 10 g/m<3>, while maintaining the substrate temperature at 350° C.
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