<p>A film-forming apparatus and a film-forming method are disclosed wherein a high-frequency voltage from an HF power supply (11) is applied to a cathode (5) whose back surface is provided with a permanent magnet (10) to generate a plasma in a reactive mode and a film is formed through plasma polymerization using the thus-generated plasma. By regulating the pressure of a plasma source gas within a vacuum chamber (1), a plasma not in the reactive mode but in the metallic mode is generated and a film is formed through magnetron sputtering, wherein the cathode (5) is the sputtering target, using the thus-generated plasma.</p>
