发明名称 APPARATUS WITH PREDETERMINED LAYER COATED ON OUTER WALL OF REACTION FURNACE FOR FORMING THIN FILM
摘要 PURPOSE: An apparatus for forming a thin film is provided to improve the uniformity of the thin film and to enhance the yield by coating a predetermined layer on an outer wall of a reaction furnace. CONSTITUTION: An apparatus includes a reaction furnace(31), a wafer support pedestal, a heating furnace, and a predetermined layer. The wafer support pedestal is installed in the reaction furnace to support at least one wafer. The heating furnace(33) is installed outside the reaction furnace. The predetermined layer(50) is coated on an outer wall of the reaction furnace. The thickness of the predetermined layer is 2 μm. The predetermined layer is made of SiC.
申请公布号 KR20040100177(A) 申请公布日期 2004.12.02
申请号 KR20030032408 申请日期 2003.05.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, CHANG GU
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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