| 摘要 |
PROBLEM TO BE SOLVED: To provide a tunnel magnetoresistance effect element comprising a new bias magnetic-field apply structure wherein the magnetization rotation of a free layer relative to a signal magnetic field is stable. SOLUTION: A tunnel magnetoresistance effect element 1 is provided with a tunnel multilayer film 3 in which a tunnel barrier layer 30, a ferromagnetic free layer 20 so formed as to sandwich the tunnel barrier layer, and a ferromagnetic pinned layer 40 are laminated. A pinning layer 50 which pins the magnetization of the ferromagnetic pinned layer is laminated on the surface opposite to the side contacting the tunnel barrier layer of the ferromagnetic pinned layer, while a bias magnetic field apply layer 10 is formed on the surface opposite to the side contacting the tunnel barrier layer of the ferromagnetic free layer. The bias magnetic field apply layer is a laminate of a non-magnetic noble metal layer 11 and an anti-ferromagnetic layer 15. The ferromagnetic free layer couples in magnetic exchange with the anti-ferromagnetic layer through the non-magnetic noble metal layer so that the ferromagnetic free layer is applied with a bias magnetic field.
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