发明名称 Etching apparatus and etching method
摘要 An etching apparatus includes a shield device provided on an electrode in a reaction chamber and surrounding an object to be etched. The shield device has a surface area according to an opening area ratio of the object to be etched.
申请公布号 US2004241995(A1) 申请公布日期 2004.12.02
申请号 US20040807191 申请日期 2004.03.24
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 YAMANAKA MICHINARI
分类号 H01J37/32;H01L21/311;H01L21/768;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01J37/32
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