发明名称 Method of manufacturing photomask and method of manufacturing semiconductor integrated circuit device
摘要 Disclosed is a technique capable of reducing the manufacturing time of a photomask. In a method of transferring a predetermined pattern onto a semiconductor wafer by reduced projection exposure using a product mask manufactured by performing the reduced projection exposure to a pattern of an IP mask Mm1, the IP mask Mm1 is designed to have a resist mask structure in which a light-shielding pattern thereof is constituted of an organic film such as a resist film.
申请公布号 US6824958(B2) 申请公布日期 2004.11.30
申请号 US20010025457 申请日期 2001.12.26
申请人 RENESAS TECHNOLOGY CORP. 发明人 HAYANO KATSUYA;HASEGAWA NORIO
分类号 G03F1/08;G03F1/14;G03F1/54;G03F1/56;G03F1/68;G03F1/76;G03F3/10;G03F7/20;G03F7/22;H01L21/027;(IPC1-7):G03C5/00;G03F9/00 主分类号 G03F1/08
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