发明名称 |
Method of manufacturing photomask and method of manufacturing semiconductor integrated circuit device |
摘要 |
Disclosed is a technique capable of reducing the manufacturing time of a photomask. In a method of transferring a predetermined pattern onto a semiconductor wafer by reduced projection exposure using a product mask manufactured by performing the reduced projection exposure to a pattern of an IP mask Mm1, the IP mask Mm1 is designed to have a resist mask structure in which a light-shielding pattern thereof is constituted of an organic film such as a resist film. |
申请公布号 |
US6824958(B2) |
申请公布日期 |
2004.11.30 |
申请号 |
US20010025457 |
申请日期 |
2001.12.26 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
HAYANO KATSUYA;HASEGAWA NORIO |
分类号 |
G03F1/08;G03F1/14;G03F1/54;G03F1/56;G03F1/68;G03F1/76;G03F3/10;G03F7/20;G03F7/22;H01L21/027;(IPC1-7):G03C5/00;G03F9/00 |
主分类号 |
G03F1/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|