发明名称 |
Wafer area pressure control for plasma confinement |
摘要 |
A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.
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申请公布号 |
US6823815(B2) |
申请公布日期 |
2004.11.30 |
申请号 |
US20020225655 |
申请日期 |
2002.08.21 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
HAN TAEJOON;BENZING DAVID W.;ELLINGBOE ALBERT R. |
分类号 |
H05H1/46;B01J3/00;B01J3/02;B01J19/08;C23F4/00;H01J37/32;H01L21/3065;(IPC1-7):C23C16/00 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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