发明名称 |
Semiconductor device, method for manufacturing the same, and liquid jet apparatus |
摘要 |
A semiconductor device in which electro-thermal conversion elements and switching devices for flowing currents through the elements are integrated on a first conductive type semiconductor substrate. The switching devices are insulated gate type field effect transistors having a second conductive type first semiconductor region on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region and for adjoining the first semiconductor region; a second conductive type source region on the surface of the second semiconductor region; a second conductive type drain region on the surface of the first semiconductor region; and gate electrodes on the channel region with a gate insulator film between them. The second semiconductor region is formed by a semiconductor having an impurity concentration higher than that of the first semiconductor region, and is disposed between two adjacent drain regions, separating them in a traverse direction.
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申请公布号 |
US6825543(B2) |
申请公布日期 |
2004.11.30 |
申请号 |
US20010025674 |
申请日期 |
2001.12.26 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SHIMOTSUSA MINEO;FUJITA KEI;HAYAKAWA YUKIHIRO |
分类号 |
H01L29/78;B41J2/14;H01L21/265;H01L21/336;H01L27/088;H01L29/06;H01L29/10;H01L29/423;(IPC1-7):H01L23/58;H01L31/058 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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