| 摘要 |
In a plasma processing apparatus, a temperature control of a substrate W to be processed is improved. A ceramic made support member 26 having a substantially cylindrical shape is provided in a process chamber 10. An upper end of the support member 26 is airtightly connected to a back surface 24b of a placement table 24 by solid state bonding. A lower end of the support member 26 is airtightly connected to a bottom of the process chamber 10 via a lower cooling jacket 90 and O-rings 92, 96. A cooling jacket 40 made of a disc-like aluminum block is provided in an atmosphere chamber 38 formed inside the support member 26. The cooling jacket 40 is mounted to the back surface 24b of the placement table 24 via a heat conductive sheet member 42. <IMAGE> |
