| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming thin film by a method for etching an SOI (Silicon on Insulator) layer of an SOI wafer, and to provide a method for processing which does not generate harmful gas, such as nitrogen oxide, etc. without using harmful heavy metal. SOLUTION: As the etching liquid of the SOI layer, a hydrogen peroxide or ozone is contained in hydrofluoric acid as an oxidizing agent. Thus, uniform etching can be performed while holding surface flatness and cleanliness before etching, and the SOI layer can be uniformly thin film formed in a necessary thickness. COPYRIGHT: (C)2005,JPO&NCIPI
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