| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-purity ruthenium sputtering target which does not produce a crack when the sputtering target is upsized with a melting method, and inhibits formation of particles during formation of a film for forming a capacitor electrode or the like in a semiconductor memory, and to provide a manufacturing method therefor. SOLUTION: The method for manufacturing the high-purity ruthenium sputtering target by a plasma melting method comprises the steps of: installing a ruthenium anvil having a salient at least in the center of a bottom face, inside a crucible; placing a ruthenium raw material on the top of the ruthenium anvil and charging the anvil to a hydrogen-plasma melting furnace; melting the ruthenium raw material with a hydrogen-containing plasma orifice-gas in an inert gas atmosphere; and cooling the inside of the melting furnace, then taking out an obtained ingot, cutting the bottom face of the ingot and separating the ruthenium anvil. COPYRIGHT: (C)2005,JPO&NCIPI
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