| 摘要 |
PROBLEM TO BE SOLVED: To form a high-quality SiGe thin film having no voids therein on a gate insulating film. SOLUTION: A semiconductor device is provided, having a gate electrode which has been formed as the gate insulating film 6 on a silicon substrate 2 through an SiO<SB>2</SB>film. The gate electrode comprises a seed Si film 8 formed on the gate insulating film 6, the SiGe thin film 10 of 50 nm thick or less formed on the seed Si film 8, and a cap Si thin film 12 of 0.5-5 nm thick formed on the SiGe thin film 10. COPYRIGHT: (C)2005,JPO&NCIPI
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