| 摘要 |
PROBLEM TO BE SOLVED: To provide a dynamic semiconductor memory device in which a standby current can be reduced. SOLUTION: In a standby mode in which only a refresh operation is performed, a pre-charge/equalizing signal PC/EQ is activated only in the prescribed period Tpc before activation of the word lines, and a pair of bit lines BL, /BL is pre-charged to Vdd/2 immediately before activation of the word lines WL.As the pair of bit lines BL. /BL is separated from a half Vdd regulator generating Vdd/2 in the standby mode except the prescribed period Tpc, even if such defect is caused that the word line and the bit line are short-circuited, a leak current never be made to flow between them. COPYRIGHT: (C)2005,JPO&NCIPI
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