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发明名称
Flash memory
摘要
Flash memory devices having control circuitry to decrease the magnitude of a source voltage of a first polarity during an erase period to increase the magnitude of a control gate voltage of a second polarity applied during the erase period.
申请公布号
US2004233762(A1)
申请公布日期
2004.11.25
申请号
US20040875453
申请日期
2004.06.24
申请人
发明人
MIHNEA ANDREI;CHEN CHUN
分类号
G11C16/02;G11C11/34;G11C16/06;G11C16/14;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C11/34
主分类号
G11C16/02
代理机构
代理人
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地址
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