发明名称 |
TiSiN film forming method, diffusion barrier TiSiN film, semiconductor device, method of fabricating the same and TiSiN film forming system |
摘要 |
A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4 gas, a silicon hydride gas, H2 gas and N2 gas are used as source gases for forming a TiSiN film by the plasma CVD process.
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申请公布号 |
US2004232467(A1) |
申请公布日期 |
2004.11.25 |
申请号 |
US20040868936 |
申请日期 |
2004.06.17 |
申请人 |
OTSUKI HAYASHI;TADA KUNIHIRO;MATSUSE KIMIHIRO |
发明人 |
OTSUKI HAYASHI;TADA KUNIHIRO;MATSUSE KIMIHIRO |
分类号 |
C23C16/34;C23C16/44;C23C16/455;H01L21/02;H01L21/28;H01L21/285;H01L21/768;H01L21/8242;H01L23/485;H01L27/108;H01L29/49;(IPC1-7):H01L27/108 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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