发明名称 Control of stress in metal films by controlling the temperature during film deposition
摘要 Materials such as titanium are vapor-deposited to form a film on a substrate while the substrate is thermally coupled to a temperature-controlling thermal source. Varying the temperature conditions of the substrate when the film is deposited varies the intrinsic stress of the film, which varies the change in substrate shape caused by the presence of the film. A film having a desired intrinsic stress may be obtained by control of the substrate temperature when the film is deposited. A stress-controlled titanium film may be used, for example, as an adhesion layer between a silicon movable structure in an optical MEMS device and a gold layer serving as a reflecting surface.
申请公布号 US2004234736(A1) 申请公布日期 2004.11.25
申请号 US20030441457 申请日期 2003.05.20
申请人 CHAN HO BUN;HAUEIS MARTIN 发明人 CHAN HO BUN;HAUEIS MARTIN
分类号 B32B15/00;B81B3/00;B81C1/00;C23C14/16;C23C14/54;C23C16/40;C23C16/44;C23C16/46;(IPC1-7):B32B15/00 主分类号 B32B15/00
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