发明名称 Manufacturing method for a solid-state imaging apparatus, and the solid-state imaging apparatus
摘要 A light receiving region 21 and a floating diffusion region 22 are formed apart from each other in a semiconductor substrate 20 (S 11 ), translucent adhesive 31 is applied to an area corresponding to the light receiving region 21 on the semiconductor substrate 20 (S 22 ), and a translucent plate 30 is attached to the semiconductor substrate 20 on which the translucent adhesive 31 has been applied (S 23 ). In this semiconductor manufacturing process, before the translucent adhesive 31 is applied, a dam member 24 is formed on the semiconductor substrate 20 so as to prevent the translucent adhesive 31 from flowing into an area corresponding to the floating diffusion region 22 on the semiconductor substrate 20 (S 18 ).
申请公布号 US2007200944(A1) 申请公布日期 2007.08.30
申请号 US20060588419 申请日期 2006.10.27
申请人 TAKEUCHI YASUO;KOMATSU TOMOKO;TERANISHI NOBUKAZU;MASUDA TOMOKI;HARADA YUTAKA;HARADA MITURU;OHBAYASHI TAKASHI 发明人 TAKEUCHI YASUO;KOMATSU TOMOKO;TERANISHI NOBUKAZU;MASUDA TOMOKI;HARADA YUTAKA;HARADA MITURU;OHBAYASHI TAKASHI
分类号 H04N3/14;H04N9/64 主分类号 H04N3/14
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