METHOD FOR MANUFACTURING DUAL GATE FOR CMOS TECHNOLOGY

摘要

PROBLEM TO BE SOLVED: To provide a method and a structure for a method for manufacturing a device having different type transistors. SOLUTION: Gates of different type transistors in a device include different materials. The method comprises the steps of: depositing a silicon layer on a gate insulating layer; depositing a first type gate material on the silicon layer; removing the first type gate material from the region in which a second type gate is formed; depositing a second type gate material on the silicon layer in the region from which the first type gate material has been removed; simultaneously patterning in order to form the first type gate material and the second type gate material into the first type gate and the second type gate; and changing the two type gate materials by annealing. COPYRIGHT: (C)2005,JPO&NCIPI