发明名称 |
Methods for forming high density, conformal, silica nanolaminate films via pulsed deposition layer in structures of confined geometry |
摘要 |
Methods of forming conformal films with increased density are described. The methods may be used to improve gap fill in semiconductor device manufacturing by eliminating seams and voids. The methods involve operating at high reactant partial pressure. Additionally, film properties may be further enhanced by optimizing the temperature of the substrate during exposure to the metal-containing and/or silicon-containing precursor gases commonly used in conformal film deposition techniques such as ALD and PDL.
|
申请公布号 |
US7271112(B1) |
申请公布日期 |
2007.09.18 |
申请号 |
US20040026284 |
申请日期 |
2004.12.30 |
申请人 |
NOVELLUS SYSTEMS, INC. |
发明人 |
PAPASOULIOTIS GEORGE D.;TARAFDAR RAIHAN M.;TIPTON ADRIANNE K.;RULKENS RON;HAUSMANN DENNIS M.;TOBIN JEFF |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|