发明名称 |
Method and circuit for compensating MOSFET capacitance variations in integrated circuits |
摘要 |
A method for tracking the MOS oxide thickness by the native threshold voltage of a "native" MOS transistor without channel implantation for the purpose of compensating MOS capacitance variations is achieved. The invention makes use of the fact that in MOS devices the threshold voltage is proportionally correlated to the oxide thickness of said MOS device. Said threshold voltage can therefore be used to build a reference voltage Vx+Vth which accurately tracks the MOS capacitance variations in integrated circuits. Circuits are achieved to create a frequency reference and a capacitance reference using said method Additionally a method is introduced to create a capacitance reference in integrated circuits using said MOSFET capacitors.
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申请公布号 |
US2004232921(A1) |
申请公布日期 |
2004.11.25 |
申请号 |
US20040869448 |
申请日期 |
2004.06.16 |
申请人 |
DIALOG SEMICONDUCTOR GMBH |
发明人 |
EBERLEIN MATTHIAS |
分类号 |
H03K3/011;H03K3/0231;(IPC1-7):G01R27/26 |
主分类号 |
H03K3/011 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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