| 发明名称 |
FILM FORMING METHOD AND APPARATUS |
| 摘要 |
<p>A film forming method for forming a barrier metal film on a semiconductor wafer and then forming a metallic film such as of copper, is characterized in that a series of processings from the formation of the barrier metal film to the formation of the metallic film is conducted in an environment shut from the air. Specifically, the barrier metal film is formed by a first apparatus such as a sputtering apparatus, the metallic film is formed by a second apparatus, and the semiconductor wafer is transferred in a transfer passage shut from the air. As a result, the barrier metal film is free from any influence such as of natural oxidation and therefore the quality of the barrier metal film is improved.</p> |
| 申请公布号 |
WO2004102649(A1) |
申请公布日期 |
2004.11.25 |
| 申请号 |
WO1999JP06049 |
申请日期 |
1999.10.29 |
| 申请人 |
WADA, YUICHI;YARITA, HIROYUKI;AIDA, HISASHI;YOSHIDA, NAOMI |
发明人 |
WADA, YUICHI;YARITA, HIROYUKI;AIDA, HISASHI;YOSHIDA, NAOMI |
| 分类号 |
H01L21/00;H01L23/52;C23C18/02;C23C18/08;H01L21/28;H01L21/285;H01L21/288;H01L21/3205;H01L21/768;(IPC1-7):H01L21/288 |
主分类号 |
H01L21/00 |
| 代理机构 |
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| 主权项 |
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| 地址 |
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