METHOD PROVIDING AN IMPROVED BI-LAYER PHOTORESIST PATTERN
摘要
A method for etching a feature in a layer is provided. An underlayer of a polymer material is formed over the layer. A top image layer is formed over the underlayer. The top image layer is exposed to patterned radiation. A pattern is developed in the top image layer. The pattern is transferred from the top image layer to the underlayer with a reducing dry etch. The layer is etched through the underlayer, where the top image layer is completely removed and the underlayer is used as a pattern mask during the etching the layer to transfer the pattern from the underlayer to the layer.
申请公布号
WO2004102277(A2)
申请公布日期
2004.11.25
申请号
WO2004US13818
申请日期
2004.04.29
申请人
LAM RESEARCH CORPORATION;XIAO, HANZHONG;ZHU, HELEN, H.;TANG, KUO-LUNG;SADJADI, S.M., REZA