发明名称 Chemical vapor deposition precursors for deposition of copper
摘要 Copper precursors of the formula (I):wherein:Cu is Cu(I) or Cu(II);x is an integer having a value of from 0 to 4;each of R, R' and R'' may be the same as or different from one another and each is independently selected from the group consisting of H, C1-C6 alky), C1-C6 perfluoroalkyl and C6-C10 aryl;when Cu is Cu(I), A is a Lewis base;when Cu is Cu(II), A is:wherein x, R, R' and R'' are as specified above.
申请公布号 US6822107(B1) 申请公布日期 2004.11.23
申请号 US20030643272 申请日期 2003.08.19
申请人 ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 BAUM THOMAS H.;BHANDARI GAUTAM;XU CHONGYING
分类号 C07C229/76;C23C16/18;(IPC1-7):C07F1/08;C23C16/00 主分类号 C07C229/76
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