发明名称 |
Method for dry etching deep trenches in a substrate |
摘要 |
A method for etching trenches in a substrate secures a wafer to an electrode in a plasma chamber and heats the wafer to a temperature of greater than 200 degrees Celsius. The wafer is exposed to a reactive plasma to etch trenches into the substrate of the wafer with minimal redeposition of etch by-products to avoid pinching off the trench and to promote further etching.
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申请公布号 |
US6821900(B2) |
申请公布日期 |
2004.11.23 |
申请号 |
US20010757123 |
申请日期 |
2001.01.09 |
申请人 |
INFINEON TECHNOLOGIES AG;INTERNATIONAL BUSINESS MACHINES |
发明人 |
ATHAVALE SATISH;RANADE RAJIV;NAEEM MUNIR;MATHAD GANGADHARA SWAMI |
分类号 |
H01L21/302;H01L21/3065;H01L21/311;H01L21/3213;(IPC1-7):H01L21/311 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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