发明名称 |
Methods of forming resist pattern, forming electrode pattern, and manufacturing surface acoustic wave device |
摘要 |
Methods of forming a resist pattern, of forming an electrode pattern, and of manufacturing a surface acoustic wave device are provided. The resist-pattern- and the electrode-pattern-forming methods each comprise a step of forming an antireflection film for preventing ultraviolet light from diffusely reflecting to a transparent substrate. The antireflection film is formed with a semiconductor having a band gap energy of 3.4 eV or less. The reflectance is expressed by (n1-n2)<2>/(n1+n2)<2 >is 0.15 or less, wherein n1 and n2 is the refractive indexes of the substrate and the antireflection film, respectively. The resist-pattern- and the electrode-pattern-forming methods with simple processes can achieve high-quality, reliable resist patterns and electrode patterns.
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申请公布号 |
US6821712(B2) |
申请公布日期 |
2004.11.23 |
申请号 |
US20020041214 |
申请日期 |
2002.01.07 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
SAKAGUCHI KENJI;FUYUTSUME TOSHIYUKI;KOSHIDO YOSHIHIRO |
分类号 |
G03F7/11;B60J7/22;G03F7/09;H01L21/027;H03H3/08;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/11 |
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地址 |
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