摘要 |
A method for producing a joined body comprising a supporting member made of a ceramic material for supporting a semiconductor wafer, a metal member and a joining layer for joining the supporting and metal members is provided. A first metal film is formed on a joining surface of the supporting member. A second metal film is formed on a joining surface of the metal member. A metal adhesive is placed between the first and second films to provide an assembly. The assembly is then heated at a temperature not higher than a melting point of the metal adhesive while the assembly is subjected to isostatic pressing, so that the supporting and metal members are joined by diffusion joining.
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