| 摘要 |
A semiconductor device is provided to avoid an operation of a parasitic PN junction diode by forming a parasitic PN junction diode in a reverse direction of the parasitic PN junction diode. First and second CMOS switching devices are formed on a silicon substrate(21). A Schottky diode is formed together with the first and second CMOS switching devices. A Schottky diode isolation layer surrounds a region for forming the Schottky diode, isolating the Schottky diode from the silicon substrate. The Schottky diode isolation layer can include an impurity isolation region(26) surrounding the lateral surface of the Schottky diode formation region and an impurity diffusion region(23,28) surrounding the lower surface of the Schottky diode formation region.
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