| 摘要 |
FIELD: semiconductor electronics. ^ SUBSTANCE: ratio of areas of pn junction structure components and gap between pn junction and contact to substrate is chosen in avalanche-multiplication silicon lateral photodetector. Spatial charge area of pn junction fully covers gap between pn+ junction and pn+ contact to substrate. Avalanche multiplication of charge carriers is ensured by applying operating voltage due to concentration of electric field about small-size n+ and p+ areas. ^ EFFECT: reduced capacitance, enhanced speed and photosensitivity. ^ 3 cl, 7 dwg |
