| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE TO CONTROL DECREASE OF THRESHOLD VOLTAGE AND PREVENT ELECTRIC FIELD FROM BEING CONCENTRATED ON SHOULDER PART OF ACTIVE REGION |
| 摘要 |
<p>PURPOSE: A semiconductor integrated circuit device is provided to control a decrease of a threshold voltage and prevent an electric field from being concentrated on a shoulder part of an active region by rounding the shoulder part of the active region. CONSTITUTION: A groove(2) is formed in a semiconductor substrate(1). The first insulation layer is buried in the groove. The groove has an inclined surface. The first boundary part between the inclined surface and the surface of the semiconductor substrate is made round. The second boundary part between the inclined surface and the sidewall of the groove is made round.</p> |
| 申请公布号 |
KR20040098617(A) |
申请公布日期 |
2004.11.20 |
| 申请号 |
KR20040087220 |
申请日期 |
2004.10.29 |
| 申请人 |
KABUSHIKI KAISHA HITACHI SEISAKUSHO |
发明人 |
KANAMITSU KENJI;WATANABE KOUZO;SUZUKI NORIO;ISHITSUKA NORIO |
| 分类号 |
H01L27/06;H01L21/28;H01L21/331;H01L21/336;H01L21/76;H01L21/762;H01L21/8222;H01L21/8234;H01L21/8238;H01L21/8242;H01L27/08;H01L27/108;H01L29/49;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L27/06 |
| 代理机构 |
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