发明名称 RESIDUE REMOVING COMPOSITION FOR PHOTOSENSITIVE ETCHING-RESISTANT LAYER COMPRISING ORGANIC ACID OR ITS ANHYDRIDE, POLAR ORGANIC SOLVENT AND OTHER ACID
摘要 PURPOSE: Provided is a residue removing composition for a photosensitive etching-resistant layer which effectively removes the organometallic or metal oxide residue modified by the by-product from an under metal layer without damaging the under layer, shows a stable removing property owing to a low volatility and is reduced in the toxicity to the human body. CONSTITUTION: The residue removing composition comprises 1-10 wt% of at least one selected from the group consisting of tartaric acid, citraconic acid, citraconic anhydride, maleic acid, maleic anhydride and fumaric acid; 58.99-89 wt% of a polar organic solvent; 9.99-30 wt% of deionized water; and 0.01-1 wt% of an acid selected from the group consisting of oxalic acid and an inorganic acid. Preferably the polar organic solvent is one or two water-soluble organic solvent selected from the group consisting of methyl carbitol, ethyl carbitol, butyl carbitol, dimethyl carbitol and dibutyl carbitol; and the inorganic acid is at least one selected from the group consisting of sulfuric acid and perchloric acid.
申请公布号 KR20040098179(A) 申请公布日期 2004.11.20
申请号 KR20030030452 申请日期 2003.05.14
申请人 LIQUID TECHNOLOGY CO., LTD. 发明人 KIM, SEONG JIN
分类号 G03F7/32;C08K3/00;C11D7/08;C11D7/26;C11D7/50;C11D11/00;G03F7/42;H01L21/02;H01L21/027;H01L21/304;H01L21/306;H01L21/3213;(IPC1-7):G03F7/32 主分类号 G03F7/32
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