| 摘要 |
FIELD: semiconductor technology. ^ SUBSTANCE: proposed method for producing silicon films used in manufacturing silicon-on-insulator and silicon-on-silicon structures for very large-scale integrated circuits and other microelectronic and nanoelectronic devices includes introduction of hydrogen in working silicon wafer thereby producing hydrogenated layer followed by production of layer in working wafer whose polarity of conductivity is reverse to that of the latter during operation of splicing substrate wafer with working one due to accelerated formation of donor centers in hydrogenated layer or introduction of hydrogen into working silicon wafer to produce hydrogenated layer followed by formation of layer in working silicon wafer whose polarity of conductivity is reverse to that of the latter due to accelerated formation of donor centers in hydrogenated layer, whereupon substrate wafer is spliced with working one. ^ EFFECT: improved quality of films due to reducing their defectiveness. ^ 8 cl, 3 dwg |
